Advertisement
Product Releases
Advertisement

Cree's New 50V GaN HEMT Devices Improve Power Amplifier Efficiency

Thu, 11/01/2012 - 11:39am
PD&D Staff

LISTED UNDER:

Cree, Inc. (Durham, NC) [Nasdaq: CREE] has introduced a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. Leveraging this new innovative Cree technology, radio base station power amplifiers have demonstrated performance improvements of more than 20 percent over incumbent technology at 2.6 GHz operating under the latest 4G LTE signals. Features include:

  • Output powers of 100 or 200 W.
  • Frequency bands of 1.8 to 2.2 GHz and 2.5 to 2.7 GHz.
  • Wide instantaneous bandwidths. 
  • Power gains higher than 18 dB @ 2.14 GHz and 16 dB @ 2.6 GHz.

For more information visit www.cree.com.

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading

Curated By Logo