Efficient Power Conversion Corporation (EPC) (El Segundo, CA) has announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective. Features include:

  • A 200 V peak voltage.
  • A 2 A maximum output current. 
  • A dedicated gate driver on a single 2” x 1.5” board. 

For more information visit www.epc-co.com.

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