The GaN HEMT power transistors and high power amplifier (HPA) MMIC feature power gains of greater than 11 dB.

Cree, Inc. (Durham, NC) (Nasdaq: CREE) has announced its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band). Features include:

• A saturated RF output power of 240 watts over 2.7 to 3.1 GHz and 3.1 to 3.5 GHz, respectively.
• Power gains of greater than 11 dB.
• A small package footprints of 0.9" x 0.68".
• Typical power added efficiencies of 60 percent.
• A pulse droop of less than 0.2 dB at specified operating conditions.

For more information visit www.cree.com.